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한국생산제조학회 학술지 영문 홈페이지
[ Papers ]
Journal of the Korean Society of Manufacturing Technology Engineers - Vol. 28, No. 1, pp.37-41
ISSN: 2508-5107 (Online)
Print publication date 15 Feb 2019
Received 26 Dec 2018 Revised 13 Feb 2019 Accepted 13 Feb 2019
DOI: https://doi.org/10.7735/ksmte.2019.28.1.37

실리콘 레이저 소결에서 은 나노 입자의 도핑 효과에 관한 연구

백승현a ; 권승갑a ; Biniti ZamriLiyana Hazawania ; 강인구a ; 강봉철a, *
A Study on Doping Effect of Silver Nanoparticles in Silicon Laser Sintering
Seunghyun Backa ; Seung-Gab Kwona ; Liyana Hazawani Biniti Zamria ; Ingu Kanga ; Bongchul Kanga, *
aDepartment of Mechanical System Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi, Gyeongbuk-do, 39177, Korea

Correspondence to: *Tel.: +82-54-478-7400 Fax: +82-54-478-7319 E-mail address: kbc@kumoh.ac.kr (Bongchul Kang).

Abstract

Silicon is used as an essential material in the electronic and energy industries owing to its high accessibility and inherent semiconducting properties. Typically, silicon devices are produced by top-down chemical etchings, such as anisotropic etching and reactive ion etching, to make micropatterns and surface textures. In addition, doping using thermal diffusion or ion implantation is also required to optimize electrical characteristics. We propose a one-step method for fabricating multi-scale silicon layer based on the concurrent interaction of doping of silver nanoparticles during laser-induced sintering of silicon nanocrystals. The silver-doped silicon patterns were characterized by a uniform distribution and the concentration of dopants was easily adjustable by controlling the relative amount of silver nanoparticles. We expect that this method will contribute to fabricating multi-scale silicon semiconductors without using complicated chemical and vacuum processes.

Keywords:

Silicon process, Multi-scale structure, Silicon nanocrystal, Silver nanoparticle, Laser doping

Acknowledgments

이 연구는 금오공과대학교의 연구비 지원에 의해 수행되었다.

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