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CVD Chamber 방사율 변화에 따른 Wafer 온도에 대한 수치해석적 연구
Abstract
In this study, the temperature within a CVD chamber at 10 Torr was numerically investigated using Computational Fluid Dynamics (CFD). A detailed threedimensional (3D) representation of the chamber illustrates the deposition due to CVD on the showerhead and chamber walls. In this study, the changes in the average temperature and temperature variation of a wafer, when the surface emissivity changes due to this deposition, are examined. Additionally, the effects of varying the process gap, which is the distance between the wafer and showerhead, on the temperature distribution of the wafer are analyzed. Based on these analyses, in this study, specific process variables are proposed to optimize the average temperature and temperature uniformity of the wafer. Finally, methods to mitigate the impact of changes in emissivity and ensure consistent wafer quality are proposed.
Keywords:
Wafer temperature, CVD chamber, Radiation, Showerhead, Drift, CFDAcknowledgments
본 연구는 산업통상자원부와 한국산업기술기획평가원의 지원(20021828)과 2024년도 한국기술교육대학교 교육연구진흥과제의 연구비 지원 및 한국연구재단의 지자체-대학 협력기반 지역혁신 사업(2021RIS-004)으로 연구되었음.
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Ph.D. Candidate in the Department of Mechanical Engineering, Korea University of Technology and Education. His research interest is Semiconductor and Fluid Dynamics.
E-mail: soongan@koreatech.ac.kr
Professor in the Department of Mechanical Engineering in Korea University of Technology and Education. His research interests are Computational Fluid Dynamics in Semiconductor Equipment.
E-mail: smkim@koreatech.ac.kr