![한국생산제조학회 학술지 영문 홈페이지](/images/basic/pubreader_back.gif)
CVD Chamber의 Gas 확산에 대한 수치해석적 연구
Abstract
In this study, a numerical simulation is performed to analyze the structural nonuniformity caused by the wafer gate in a chemical vapor deposition (CVD) chamber. The effect of the process gap on the O3 mole fraction, flow velocity, and wall shear stress is investigated. Increasing the gap improves the wafer surface uniformity from 0.138% to 0.122% as the gap approaches 50 mm. The difference in the O3 mole fraction at the gate is minimal, thus signifying mild diffusion. The wall shear stress increases up to 3.91 times at the gate floor under wider gaps, whereasit decreases by 6% on the wafer. A wider gap decreases the deposition rate but enhances the cleaning efficiency. To reduce nonuniformity, a process gap of 10 mm or less is recommended for CVD processes, whereas a gap of 50 mm or more significantly improves cleaning efficiency.
Keywords:
Process gap, CVD chamber, Gas mixing, Showerhead, Uniformity, CFDAcknowledgments
본 연구는 산업통상자원부와 한국산업기술기획평가원의 지원(20021828)과 2023년도 한국기술교육대학교 교육연구진흥과제의 연구비 지원으로 연구되었음.
References
-
Williams, R. S., 2017, What's Next? [The end of Moore's law], Comput. Sci. Eng., 19:2 7-13.
[https://doi.org/10.1109/MCSE.2017.31]
-
Kleijn, C. R., Dorsman, R., Kuijlaars, K. J., Okkerse, M., van Santen, H., 2007, Multi-scale Modeling of Chemical Vapor Deposition Processes for Thin Film Technology, J. Cryst. Growth, 303:1 362-380.
[https://doi.org/10.1016/j.jcrysgro.2006.12.062]
-
Chae, Y. K., Egashira, Y., Shimogaki, Y., Sugawara, K., Komiyama, H., 1999, Chemical Vapor Deposition Reactor Design Using Small-Scale Diagnostic Experiments Combined with Computational Fluid Dynamics Simulations, J. Electrochem. Soc., 146 1780.
[https://doi.org/10.1149/1.1391843]
-
Kim, E. J., Gill, W, N., 1994, Modeling of CVD of Silicon Dioxide Using TEOS and Ozone in a Single-Wafer Reactor, J. Electrochem. Soc., 141 3462.
[https://doi.org/10.1149/1.2059355]
-
Liu, H., Zhu, Y., Meng, Q., Lu, X., Kong, S., Huang, Z., Jiang, P., Bao, X., 2016, Role of the Carrier Gas Flow Rate in Monolayer MoS2 Growth by Modified Chemical vapor Deposition, Nano Res., 10 643-651.
[https://doi.org/10.1007/s12274-016-1323-3]
- Thanu, D. P. R., Srinadhu, E. S., Zhao, M., Dole, N. V., Keswani, M., 2019, Fundamentals and Applications of Plasma Cleanin, in Developments in Surface Contamination and Cleaning: Applications of Cleaning Techniques (edited by Kohli, R., Mittal, K.L), Elsevier, Amsterdam Netherlands.
-
Kleijn, C. R., van der Meer, Th. H., Hoogendoorn, C. J., 1989, A Mathematical Model for LPCVD in a Single Wafer Reactor, J. Electrochem. Soc., 136 3423.
[https://doi.org/10.1149/1.2096465]
Ph.D. Candidate in the Department of Mechanical Engineering, Korea University of Technology and Education. His research interest is Semiconductor and Fluid Dynamics.
E-mail: soongan@koreatech.ac.kr
Professor in the Department of Mechanical Engineering in Korea University of Technology and Education. His research interests are Computational Fluid Dynamics in Semiconductor Equipment.
E-mail: smkim@koreatech.ac.kr